eMemory’s NVM IP solution in DRAM process

The DRAM technology requires smaller die size and larger memory density gradually. OTP IP can provide an effective repair function to improve DRAM yield. eMemory’s NeoFuse OTP solution is compatible to any process, easy integration and easy to porting. Moreover, NeoFuse doesn’t use DRAM cells and can support a wide range of VDD range operation to make product design more flexible and save power. This webinar will introduce NeoFuse cell structure and the silicon demonstration on DRAM process.

Date: Wednesday, 5 June, 2019
Time: 10:00am-10:30am (GMT+8, Taipei Time)
Speaker: Dennis Ho, Manager of Manager of Technology Development Department II, eMemory